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Investigation of Cu-Zn Point Defect on the Photovaltaic Performance of the RF-Sputtered Cu2ZnSnSe4-Based Thin Film Solar Cell

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A 4.4 % RF-sputtered Cu2ZnSnSe4 thin film solar cell was studied by transmittance electron microscopy (TEM) and photoluminescence (PL). The result reveals non-uniform elemental distribution and large potential fluctuation mainly induced by Cu-Zn defect.

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