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Investigation of Cu-Zn Point Defect on the Photovaltaic Performance of the RF-Sputtered Cu2ZnSnSe4-Based Thin Film Solar Cell

dc.citation.woscount0en_US
dc.contributor.authorKuo, Shou-Yien_US
dc.contributor.authorHsieh, Dan-Huaen_US
dc.contributor.authorYanga, Jui-Fuen_US
dc.contributor.authorLai, Fang-Ien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2015-12-02T03:00:52Z
dc.date.available2015-12-02T03:00:52Z
dc.date.issued2013-01-01en_US
dc.description.abstractA 4.4 % RF-sputtered Cu2ZnSnSe4 thin film solar cell was studied by transmittance electron microscopy (TEM) and photoluminescence (PL). The result reveals non-uniform elemental distribution and large potential fluctuation mainly induced by Cu-Zn defect.en_US
dc.identifier.isbn978-1-55752-973-2en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/128501
dc.identifier.wosnumberWOS:000355262502253en_US
dc.language.isoen_USen_US
dc.titleInvestigation of Cu-Zn Point Defect on the Photovaltaic Performance of the RF-Sputtered Cu2ZnSnSe4-Based Thin Film Solar Cellen_US
dc.typeProceedings Paperen_US

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