Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection
| dc.citation.epage | 0 | en_US |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 19 | en_US |
| dc.citation.woscount | 8 | en_US |
| dc.contributor.author | Huang, Feng-Wen | en_US |
| dc.contributor.author | Sheu, Jinn-Kong | en_US |
| dc.contributor.author | Lee, Ming-Lun | en_US |
| dc.contributor.author | Tu, Shang-Ju | en_US |
| dc.contributor.author | Lai, Wei-Chih | en_US |
| dc.contributor.author | Tsai, Wen-Che | en_US |
| dc.contributor.author | Chang, Wen-Hao | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:35:47Z | |
| dc.date.available | 2019-04-03T06:35:47Z | |
| dc.date.issued | 2011-11-07 | en_US |
| dc.description.abstract | Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of similar to 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model. (C) 2011 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.19.0A1211 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.19.0A1211 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/14661 | |
| dc.identifier.wosnumber | WOS:000296904700006 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection | en_US |
| dc.type | Article | en_US |