Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier
| dc.citation.epage | en_US | |
| dc.citation.issue | 21 | en_US |
| dc.citation.volume | 98 | en_US |
| dc.citation.woscount | 22 | |
| dc.contributor.author | Tu, Po-Min | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.author | Huang, Shih-Cheng | en_US |
| dc.contributor.author | Chiu, Ching-Hsueh | en_US |
| dc.contributor.author | Chang, Jet-Rung | en_US |
| dc.contributor.author | Chang, Wei-Ting | en_US |
| dc.contributor.author | Wuu, Dong-Sing | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Lin, Chien-Chung | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Hsu, Chih-Peng | en_US |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:32Z | |
| dc.date.available | 2014-12-08T15:11:32Z | |
| dc.date.issued | 2011-05-23 | en_US |
| dc.description.abstract | The efficiency droop in InGaN-based UV light emitting device (LED) with AlGaN and InAlGaN barrier is investigated. Electroluminescence results indicate that the light performance of quaternary LEDs can be enhanced by 25% and 55% at 350 mA and 1000 mA, respectively. Furthermore, simulations show that quaternary LEDs exhibit 62% higher radiative recombination rate and low efficiency degradation of 13% at a high injection current. We attribute this improvement to increasing of carrier concentration and uniform redistribution of carriers. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3591967] | en_US |
| dc.identifier.doi | 10.1063/1.3591967 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3591967 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8841 | |
| dc.identifier.wosnumber | WOS:000291041600007 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier | en_US |
| dc.type | Article | en_US |