一種新式氮化矽快閃式記憶元件研究(I)

dc.contributor.author	汪大暉	en_US
dc.contributor.author	WANG TAHUI	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
dc.date.accessioned	2014-12-13T10:35:26Z
dc.date.available	2014-12-13T10:35:26Z
dc.date.issued	2001	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC90-2215-E009-066	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665696&docId=126372	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/93431
dc.language.iso	zh_TW	en_US
dc.subject	氮化矽	zh_TW
dc.subject	快閃記憶體	zh_TW
dc.subject	物理特性	zh_TW
dc.subject	電子可抹拭唯讀記憶體	zh_TW
dc.subject	Silicon nitride	en_US
dc.subject	Flash memory	en_US
dc.subject	Physical characterization	en_US
dc.subject	EEPROM	en_US
dc.title	一種新式氮化矽快閃式記憶元件研究(I)	zh_TW
dc.title	Physics, Characterization and Design of Oxide-Nitride-Oxide Flash EEPROM Devices (I)	en_US
dc.type	Plan	en_US

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