Thermal-treatment induced deep electron traps in AlInP
| dc.citation.epage | 4865 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 4864 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Sung, WJ | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.author | Lin, WJ | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:36Z | |
| dc.date.available | 2014-12-08T15:43:36Z | |
| dc.date.issued | 2001-08-01 | en_US |
| dc.description.abstract | The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500 degreesC and shall be attributed to the generation of phosphorus vacancies (V-p) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products. | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29484 | |
| dc.identifier.wosnumber | WOS:000170772700019 | |
| dc.language.iso | en_US | en_US |
| dc.subject | AlInP | en_US |
| dc.subject | annealing | en_US |
| dc.subject | thermal-treatment | en_US |
| dc.subject | defect | en_US |
| dc.subject | deep level | en_US |
| dc.subject | phosphorus vacancy | en_US |
| dc.subject | DLTS | en_US |
| dc.title | Thermal-treatment induced deep electron traps in AlInP | en_US |
| dc.type | Article | en_US |