Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer
| dc.citation.epage | 1409 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1407 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Chen, Lun-Chun | en_US |
| dc.contributor.author | Wu, Yung-Chun | en_US |
| dc.contributor.author | Lin, Tien-Chun | en_US |
| dc.contributor.author | Huang, Jyun-Yang | en_US |
| dc.contributor.author | Hung, Min-Feng | en_US |
| dc.contributor.author | Chen, Jiang-Hung | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:47:37Z | |
| dc.date.available | 2014-12-08T15:47:37Z | |
| dc.date.issued | 2010-12-01 | en_US |
| dc.description.abstract | This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10(4) s at 85 degrees C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications. | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2076271 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2076271 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31878 | |
| dc.identifier.wosnumber | WOS:000284541400017 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Indium gallium zinc oxide (IGZO) | en_US |
| dc.subject | nanocrystal (NC) | en_US |
| dc.subject | nonvolatile memory (NVM) | en_US |
| dc.subject | thin-film transistor (TFT) | en_US |
| dc.title | Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium-Gallium-Zinc-Oxide Charge-Trapping Layer | en_US |
| dc.type | Article | en_US |