A POLYSILICON-ON-OXIDE (POSOX) ISOLATION STRUCTURE FOR BIPOLAR INTEGRATED-CIRCUITS
| dc.citation.epage | 845 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 841 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | TAN, FL | en_US |
| dc.contributor.author | WU, NW | en_US |
| dc.contributor.author | TANG, RB | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:03Z | |
| dc.date.available | 2014-12-08T15:06:03Z | |
| dc.date.issued | 1987-08-01 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4625 | |
| dc.identifier.wosnumber | WOS:A1987J494200010 | |
| dc.language.iso | en_US | en_US |
| dc.title | A POLYSILICON-ON-OXIDE (POSOX) ISOLATION STRUCTURE FOR BIPOLAR INTEGRATED-CIRCUITS | en_US |
| dc.type | Article | en_US |
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