A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration
| dc.citation.epage | 444 | en_US |
| dc.citation.spage | 442 | en_US |
| dc.contributor.author | Huang, Shi-Zhe | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:25:30Z | |
| dc.date.available | 2014-12-08T15:25:30Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.abstract | A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behaviour of the source follower with a LTPS TFT. A new interpretation of the threshold voltage of LTPS TFT is also provided. | en_US |
| dc.identifier.isbn | 978-957-28522-2-4 | en_US |
| dc.identifier.journal | IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17901 | |
| dc.identifier.wosnumber | WOS:000259399200118 | |
| dc.language.iso | en_US | en_US |
| dc.title | A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration | en_US |
| dc.type | Proceedings Paper | en_US |
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