氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:35:54Z | |
| dc.date.available | 2014-12-13T10:35:54Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2215-E009-103 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=660685&docId=125043 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/93649 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵族半導體 | zh_TW |
| dc.subject | 高功率電子元件 | zh_TW |
| dc.subject | 高頻 | zh_TW |
| dc.subject | GaN semiconductor | en_US |
| dc.subject | High power electronic device | en_US |
| dc.subject | High frequency | en_US |
| dc.title | 氮化鎵族化合物半導體之高功率電子元件製作及其高頻特性量測分析 | zh_TW |
| dc.title | High Power Electronic Devices Fabrication and High Frequency Characterization of Gallium Nitride Based Compound Semiconductors | en_US |
| dc.type | Plan | en_US |
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