HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING
| dc.citation.epage | 288 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 286 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 24 | |
| dc.contributor.author | CHEN, HR | en_US |
| dc.contributor.author | HUANG, CH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | TSAI, KL | en_US |
| dc.contributor.author | TSANG, JS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:52Z | |
| dc.date.available | 2014-12-08T15:03:52Z | |
| dc.date.issued | 1994-08-01 | en_US |
| dc.description.abstract | An Npn heterojunction bipolar transistor with a Si-delta-doped layer at the emitter-base hetero-interface is demonstrated. The Si delta-doped layer reduces the potential spike at the emitter junction. This design reserves the abruptness of the heterojunction, reduces electron barrier and increases the hole barrier simultaneously. Experimental results show that the HBT's turn-on characteristics are greatly improved while the current gain remains high. The offset voltages as low as 44 mV have been obtained. Very high current gains at very low collector current densities are obtained. | en_US |
| dc.identifier.doi | 10.1109/55.296218 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.296218 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2387 | |
| dc.identifier.wosnumber | WOS:A1994PB03100008 | |
| dc.language.iso | en_US | en_US |
| dc.title | HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING | en_US |
| dc.type | Article | en_US |