Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
| dc.citation.epage | 1375 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1373 | en_US |
| dc.citation.volume | 71 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Cheng, RH | en_US |
| dc.contributor.author | Ou, J | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:28Z | |
| dc.date.available | 2014-12-08T15:01:28Z | |
| dc.date.issued | 1997-09-08 | en_US |
| dc.description.abstract | We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm(2) at 100 K(300 K). (C) 1997 American Institute of Physics. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/310 | |
| dc.identifier.wosnumber | WOS:A1997XU88900031 | |
| dc.language.iso | en_US | en_US |
| dc.title | Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure | en_US |
| dc.type | Article | en_US |
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