Two-bit lanthanum oxide trapping layer nonvolatile flash memory
| dc.citation.epage | H622 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | H619 | en_US |
| dc.citation.volume | 154 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | Lin, Yu-Hsien | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.author | Yang, Tsung-Yuan | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:06Z | |
| dc.date.available | 2014-12-08T15:15:06Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high-k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2O3 is an excellent candidate for use as the trapping layer in SONOS-type memories. (C) 2007 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.2737345 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.2737345 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11336 | |
| dc.identifier.wosnumber | WOS:000246892000063 | |
| dc.language.iso | en_US | en_US |
| dc.title | Two-bit lanthanum oxide trapping layer nonvolatile flash memory | en_US |
| dc.type | Article | en_US |