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Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure (vol 110, 053703, 2011)

dc.citation.epageen_US
dc.citation.issue11en_US
dc.citation.spageen_US
dc.citation.volume110en_US
dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:21:12Z
dc.date.available2014-12-08T15:21:12Z
dc.date.issued2011-12-01en_US
dc.description.abstracten_US
dc.identifier.doi10.1063/1.3668129en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3668129en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15051
dc.language.isoen_USen_US
dc.titleInvestigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/Fe structure (vol 110, 053703, 2011)en_US
dc.typeCorrectionen_US

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