Reflection-type normally-on two-wavelength modulator
| dc.citation.epage | 613 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 611 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Tsai, CM | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:54Z | |
| dc.date.available | 2014-12-08T15:01:54Z | |
| dc.date.issued | 1997-03-27 | en_US |
| dc.description.abstract | The authors demonstrate a novel reflection-type normally-on two-wavelength modulator by combining two quantum-well structures with different operating wavelengths in a coupled cavity structure. Reflection spectra show simultaneous modulations at wavelengths of 856 and 886 nm in the device consisting of GaAs/A1GaAs and InGaAs/A1GaAs quantum wells for each wavelength. Under separate applied voltages, maximum reflectivity changes of 70 and 54% were obtained for the two wavelengths. To the best of the authors' knowledge, this is the First two-wavelength reflection modulator ever reported. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/658 | |
| dc.language.iso | en_US | en_US |
| dc.subject | semiconductor quantum wells | en_US |
| dc.subject | optical modulation | en_US |
| dc.title | Reflection-type normally-on two-wavelength modulator | en_US |
| dc.type | Article | en_US |