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EFFECT OF NONPARABOLICITY ON TRANSVERSE MAGNETORESISTANCE IN NONDEGENERATE SEMICONDUCTORS

dc.citation.epage435en_US
dc.citation.issue8en_US
dc.citation.spage434en_US
dc.citation.volume30en_US
dc.citation.woscount5
dc.contributor.authorWU, CCen_US
dc.contributor.authorCHEN, Aen_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.date.accessioned2014-12-08T15:07:12Z
dc.date.available2014-12-08T15:07:12Z
dc.date.issued1977en_US
dc.identifier.doi10.1063/1.89409en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.89409en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5654
dc.identifier.wosnumberWOS:A1977DB53400030
dc.language.isoen_USen_US
dc.titleEFFECT OF NONPARABOLICITY ON TRANSVERSE MAGNETORESISTANCE IN NONDEGENERATE SEMICONDUCTORSen_US
dc.typeArticleen_US

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