BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL

dc.citation.epage	675	en_US
dc.citation.issue	4-6	en_US
dc.citation.spage	673	en_US
dc.citation.volume	37	en_US
dc.citation.woscount	1
dc.contributor.author	CHANG, YH	en_US
dc.contributor.author	YEH, JJ	en_US
dc.contributor.author	SHEU, YM	en_US
dc.contributor.author	WANG, CC	en_US
dc.contributor.author	CHEN, TC	en_US
dc.contributor.author	CHANG, KH	en_US
dc.contributor.author	LEE, CP	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.date.accessioned	2014-12-08T15:04:02Z
dc.date.available	2014-12-08T15:04:02Z
dc.date.issued	1994-04-01	en_US
dc.description.abstract	Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/2547
dc.identifier.wosnumber	WOS:A1994NE79600037
dc.language.iso	en_US	en_US
dc.title	BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL	en_US
dc.type	Article	en_US

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