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DOUBLE-RESONANCE-ENHANCED RAMAN-SCATTERING IN LASER-RECRYSTALLIZED AMORPHOUS-SILICON FILM

dc.citation.epage10424en_US
dc.citation.issue15en_US
dc.citation.spage10420en_US
dc.citation.volume40en_US
dc.citation.woscount12en_US
dc.contributor.authorLEE, MCen_US
dc.contributor.authorHUANG, CRen_US
dc.contributor.authorCHANG, YSen_US
dc.contributor.authorCHAO, YFen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-03T06:39:30Z
dc.date.available2019-04-03T06:39:30Z
dc.date.issued1989-11-15en_US
dc.identifier.doi10.1103/PhysRevB.40.10420en_US
dc.identifier.issn0163-1829en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.40.10420en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4261
dc.identifier.wosnumberWOS:A1989CA78800036en_US
dc.language.isoen_USen_US
dc.titleDOUBLE-RESONANCE-ENHANCED RAMAN-SCATTERING IN LASER-RECRYSTALLIZED AMORPHOUS-SILICON FILMen_US
dc.typeArticleen_US

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