Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
| dc.citation.epage | 38 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 36 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, CY | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Hou, YT | en_US |
| dc.contributor.author | Li, MF | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.author | Kwong, DL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:51Z | |
| dc.date.available | 2014-12-08T15:39:51Z | |
| dc.date.issued | 2004-01-01 | en_US |
| dc.description.abstract | We have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency. | en_US |
| dc.identifier.doi | 10.1109/LPT.2003.818922 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2003.818922 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27237 | |
| dc.identifier.wosnumber | WOS:000187885800012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Al2O3 | en_US |
| dc.subject | electroluminescence | en_US |
| dc.subject | light | en_US |
| dc.subject | light-emitting device (LED) | en_US |
| dc.subject | SiGe | en_US |
| dc.title | Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes | en_US |
| dc.type | Article | en_US |