REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE
| dc.citation.epage | 154 | en_US |
| dc.citation.issue | 1A | en_US |
| dc.citation.spage | 150 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | LAN, WH | en_US |
| dc.contributor.author | LIN, WJ | en_US |
| dc.contributor.author | TU, SL | en_US |
| dc.contributor.author | YANG, SJ | en_US |
| dc.contributor.author | HUANG, KF | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:42Z | |
| dc.date.available | 2014-12-08T15:04:42Z | |
| dc.date.issued | 1993-01-01 | en_US |
| dc.description.abstract | The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (P(s)=P(SiH4)/P(total)) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined. | en_US |
| dc.identifier.doi | 10.1143/JJAP.32.150 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.32.150 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3192 | |
| dc.identifier.wosnumber | WOS:A1993KK94300026 | |
| dc.language.iso | en_US | en_US |
| dc.subject | PHOTOCHEMICAL VAPOR DEPOSITION | en_US |
| dc.subject | LANGMUIR-HINSHELWOOD THEORY | en_US |
| dc.title | REACTION-MECHANISM OF MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITED SILICON-OXIDE | en_US |
| dc.type | Article | en_US |