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Stable High-Density FD/SOI SRAM with Selective Back-Gate Bias Using Dual Buried Oxide

dc.citation.epage+en_US
dc.citation.spage37en_US
dc.citation.woscount1en_US
dc.contributor.authorKim, Keunwooen_US
dc.contributor.authorKuang, Jente B.en_US
dc.contributor.authorGebara, Fadien_US
dc.contributor.authorNgo, Hung C.en_US
dc.contributor.authorChuang, Ching-Teen_US
dc.contributor.authorNowka, Kevin J.en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2017-04-21T06:49:36Z
dc.date.available2017-04-21T06:49:36Z
dc.date.issued2008en_US
dc.identifier.doi10.1109/SOI.2008.4656283en_US
dc.identifier.isbn978-1-4244-1954-8en_US
dc.identifier.issn1078-621Xen_US
dc.identifier.journal2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/SOI.2008.4656283en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/135057
dc.identifier.wosnumberWOS:000262065700014en_US
dc.language.isoen_USen_US
dc.titleStable High-Density FD/SOI SRAM with Selective Back-Gate Bias Using Dual Buried Oxideen_US
dc.typeProceedings Paperen_US

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