Mapping Band Alignment across Complex Oxide Heterointerfaces

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dc.citation.epage0en_US
dc.citation.issue24en_US
dc.citation.spage0en_US
dc.citation.volume109en_US
dc.citation.woscount53en_US
dc.contributor.authorHuang, Bo-Chaoen_US
dc.contributor.authorChiu, Ya-Pingen_US
dc.contributor.authorHuang, Po-Chengen_US
dc.contributor.authorWang, Wen-Chingen_US
dc.contributor.authorVu Thanh Traen_US
dc.contributor.authorYang, Jan-Chien_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorLin, Jiunn-Yuanen_US
dc.contributor.authorChang, Chia-Sengen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.date.accessioned2019-04-03T06:42:47Z
dc.date.available2019-04-03T06:42:47Z
dc.date.issued2012-12-12en_US
dc.description.abstractIn this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface. DOI: 10.1103/PhysRevLett.109.246807en_US
dc.identifier.doi10.1103/PhysRevLett.109.246807en_US
dc.identifier.issn0031-9007en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.109.246807en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20831
dc.identifier.wosnumberWOS:000312299500009en_US
dc.language.isoen_USen_US
dc.titleMapping Band Alignment across Complex Oxide Heterointerfacesen_US
dc.typeArticleen_US

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