ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD
| dc.citation.epage | 258 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 253 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | LIU, DG | en_US |
| dc.contributor.author | CHIN, TC | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | HWANG, HL | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:18Z | |
| dc.date.available | 2014-12-08T15:05:18Z | |
| dc.date.issued | 1991-03-01 | en_US |
| dc.description.abstract | Three HEMT structures, the single heterostructure HEMT (SH-HEMT), the quantum well HEMT (QW-HEMT) and the delta-doped HEMT (delta-HEMT) were analyzed by solving the Schroedinger equation and Poisson equation self-consistently. The potential and the carrier distributions as well as the charge controlled by gate bias were calculated for different structural parameters. Parallel conduction in AlGaAs, which is severe for SH-HEMTs, is greatly reduced in QW-HEMT and delta-HEMT structures. The effect of layer parameters such as spacer layer thickness and quantum-well width on device performance has been studied. SH-HEMT and QW-HEMT have been fabricated for the confirmation of our analysis. | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3844 | |
| dc.identifier.wosnumber | WOS:A1991EZ88000003 | |
| dc.language.iso | en_US | en_US |
| dc.title | ANALYSIS OF SEVERAL HIGH-ELECTRON-MOBILITY-TRANSISTOR STRUCTURES BY A SELF-CONSISTENT METHOD | en_US |
| dc.type | Article | en_US |
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