Characterization of hydrogen-treated pentacene organic thin film transistors

Abstract

The electrical characteristics of hydrogen-postannealed and hydrogen-plasma-treated pentacene thin film transistors (TFTs) have been investigated. Experimental results have shown that the hydrogen-treated TFTs have improved field-effect mobility and a higher current on/off ratio, compared to untreated devices. The on/off current ratio of the hydrogen-treated devices was markedly increased. However, the TFTs treated with hydrogen plasma have degraded field-effect mobility, compared to hydrogen-postannealed devices.