Characterization of hydrogen-treated pentacene organic thin film transistors
| dc.citation.epage | 2369 | en_US |
| dc.citation.issue | 4B | en_US |
| dc.citation.spage | 2366 | en_US |
| dc.citation.volume | 43 | en_US |
| dc.contributor.author | Yang, JY | en_US |
| dc.contributor.author | Suen, SC | en_US |
| dc.contributor.author | Whang, WT | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:39:26Z | |
| dc.date.available | 2014-12-08T15:39:26Z | |
| dc.date.issued | 2004-04-01 | en_US |
| dc.description.abstract | The electrical characteristics of hydrogen-postannealed and hydrogen-plasma-treated pentacene thin film transistors (TFTs) have been investigated. Experimental results have shown that the hydrogen-treated TFTs have improved field-effect mobility and a higher current on/off ratio, compared to untreated devices. The on/off current ratio of the hydrogen-treated devices was markedly increased. However, the TFTs treated with hydrogen plasma have degraded field-effect mobility, compared to hydrogen-postannealed devices. | en_US |
| dc.identifier.doi | 10.1143/JJAP.43.2366 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.43.2366 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26923 | |
| dc.identifier.wosnumber | WOS:000221510800157 | |
| dc.language.iso | en_US | en_US |
| dc.subject | pentacene thin film transistors | en_US |
| dc.subject | hydrogen | en_US |
| dc.subject | plasma | en_US |
| dc.subject | field-effect mobility | en_US |
| dc.subject | on/off current ratio | en_US |
| dc.title | Characterization of hydrogen-treated pentacene organic thin film transistors | en_US |
| dc.type | Article; Proceedings Paper | en_US |