Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure (vol 110, 053703, 2011)
| dc.citation.volume | 110 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chang, Yao-Feng | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T05:57:54Z | |
| dc.date.available | 2019-04-02T05:57:54Z | |
| dc.date.issued | 2011-12-01 | en_US |
| dc.identifier.doi | 10.1063/1.3668129 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3668129 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150427 | |
| dc.identifier.wosnumber | WOS:000298254800179 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure (vol 110, 053703, 2011) | en_US |
| dc.type | Article | en_US |
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