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MAGNETOACOUSTIC EFFECT IN NON-DEGENERATE SEMICONDUCTORS

dc.citation.epage803en_US
dc.citation.issue9en_US
dc.citation.spage801en_US
dc.citation.volume32en_US
dc.citation.woscount3
dc.contributor.authorWU, CCen_US
dc.contributor.authorTSAI, Jen_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:06:32Z
dc.date.available2014-12-08T15:06:32Z
dc.date.issued1979en_US
dc.identifier.issn0038-1098en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5102
dc.identifier.wosnumberWOS:A1979HU34000017
dc.language.isoen_USen_US
dc.titleMAGNETOACOUSTIC EFFECT IN NON-DEGENERATE SEMICONDUCTORSen_US
dc.typeArticleen_US

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