COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS
| dc.citation.epage | 626 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 623 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | LIU, TH | en_US |
| dc.contributor.author | WU, SC | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:05:46Z | |
| dc.date.available | 2014-12-08T15:05:46Z | |
| dc.date.issued | 1989-09-01 | en_US |
| dc.identifier.doi | 10.1007/BF02657477 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/BF02657477 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4302 | |
| dc.identifier.wosnumber | WOS:A1989AP36100011 | |
| dc.language.iso | en_US | en_US |
| dc.title | COMPOSITIONAL DEPENDENCE OF THERMAL-STABILITY OF REFRACTORY-METAL SILICIDE SCHOTTKY CONTACTS TO GAAS | en_US |
| dc.type | Article | en_US |
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