Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films
| dc.citation.epage | 202 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 196 | en_US |
| dc.citation.volume | 11 | en_US |
| dc.citation.woscount | 31 | |
| dc.contributor.author | Wu, WF | en_US |
| dc.contributor.author | Chiou, BS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:52Z | |
| dc.date.available | 2014-12-08T15:02:52Z | |
| dc.date.issued | 1996-02-01 | en_US |
| dc.description.abstract | Indium tin oxide (ITO) films have been prepared by radio-frequency (rf) magnetron sputtering. The effect oi oxygen concentration in the sputtering ambient on the structure and properties oi ITO films are investigated. The films have a preferred orientation in the (440) plane. The presence of oxygen during sputtering enhances the crystallization of the film. Film grain size increases as more oxygen is added. According to the XPS measurements, the addition of oxygen reduces the oxygen-deficient region of the film. Hence the optical transmittance of the film is improved while film conductivity decreases. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/11/2/009 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/11/2/009 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1472 | |
| dc.identifier.wosnumber | WOS:A1996TV74000009 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effect of oxygen concentration in the sputtering ambient on the microstructure, electrical and optical properties of radio-frequency magnetron-sputtered indium tin oxide films | en_US |
| dc.type | Article | en_US |