Simulation for optimization of mask error enhancement factor by design of experiments in both dry and immersion ArF lithography
| dc.citation.epage | 6224 | en_US |
| dc.citation.issue | 8A | en_US |
| dc.citation.spage | 6216 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Yeh, Kwei-Tin | en_US |
| dc.contributor.author | Lin, Chih-Hung | en_US |
| dc.contributor.author | Hu, Ji-Ren | en_US |
| dc.contributor.author | Loong, Wen-An | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:16:09Z | |
| dc.date.available | 2014-12-08T15:16:09Z | |
| dc.date.issued | 2006-08-01 | en_US |
| dc.description.abstract | Simulations for the optimization of the mask error enhancement factor (MEEF) by using Taguchi's design of experiment (DOE) method in both dry and immersion ArF lithography have been demonstrated here. By DOE, MEEF has been successfully reduced, and the process window hash also been enlarged. Furthermore, in immersion lithography, MEEF has been significantly reduced, and resolution is also enhanced. In this study, we determined the optimal process and optical parameters to enlarge the process window and reduce MEEFs for different types of mask by DOE. | en_US |
| dc.identifier.doi | 10.1143/JJAP.45.6216 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.6216 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11988 | |
| dc.identifier.wosnumber | WOS:000240512800031 | |
| dc.language.iso | en_US | en_US |
| dc.subject | mask error enhancement factor | en_US |
| dc.subject | process window | en_US |
| dc.subject | Taguchi design of experiment | en_US |
| dc.subject | immersion lithography | en_US |
| dc.title | Simulation for optimization of mask error enhancement factor by design of experiments in both dry and immersion ArF lithography | en_US |
| dc.type | Article | en_US |