Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors
| dc.citation.epage | 4242 | en_US |
| dc.citation.issue | 37 | en_US |
| dc.citation.spage | 4237 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Tsai, Wu-Wei | en_US |
| dc.contributor.author | Chen, Chia-Hsin | en_US |
| dc.contributor.author | Tsai, Chuang-Chuang | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:20:44Z | |
| dc.date.available | 2014-12-08T15:20:44Z | |
| dc.date.issued | 2011-10-04 | en_US |
| dc.identifier.doi | 10.1002/adma.201102530 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.201102530 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/14748 | |
| dc.identifier.wosnumber | WOS:000296258900002 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin-Film Transistors | en_US |
| dc.type | Article | en_US |