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Adsorption of chlorine on the Si(001)-2 x 1 surface

dc.citation.epage392en_US
dc.citation.issue3en_US
dc.citation.spage387en_US
dc.citation.volume488en_US
dc.citation.woscount9
dc.contributor.authorPi, TWen_US
dc.contributor.authorTsai, SFen_US
dc.contributor.authorOuyang, CPen_US
dc.contributor.authorWen, JFen_US
dc.contributor.authorWu, RTen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:43:34Z
dc.date.available2014-12-08T15:43:34Z
dc.date.issued2001-08-10en_US
dc.description.abstractIt is shown that the room-temperature dissociative adsorption Of Cl-2 on the Si(0 0 1)-2 x 1 surface results in the bonding of Cl atoms to both the up- and down-dimers which then become symmetrical, At saturation coverage the Si 2p core-level spectra exhibit only a single Cl-induced component with emission twice as strong as that from the up-dimer of the clean surface and with a core-level shift of +930 +/- 8 meV. These results were obtained using an analysis in which the intensities of the core-level spectra from the individual Si layers are constrained by an escape depth. It facilitates the identification of components down to the second subsurface layer and yields an inelastic mean free path of 3.4 +/- 0.2 at a photon energy of 140 eV. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.identifier.doi10.1016/S0039-6028(01)01163-3en_US
dc.identifier.issn0039-6028en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0039-6028(01)01163-3en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/29458
dc.identifier.wosnumberWOS:000170568800012
dc.language.isoen_USen_US
dc.subjectphotoelectron spectroscopyen_US
dc.subjectsiliconen_US
dc.subjectchlorineen_US
dc.subjectgrowthen_US
dc.subjectsingle crystal epitaxyen_US
dc.titleAdsorption of chlorine on the Si(001)-2 x 1 surfaceen_US
dc.typeArticleen_US

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