Operation of a Novel Device With Suspended Nanowire Channels
| dc.citation.epage | 386 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 384 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Kuo, Chia-Hao | en_US |
| dc.contributor.author | Li, Guan-Jang | en_US |
| dc.contributor.author | Su, Chun-Jung | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:58Z | |
| dc.date.available | 2014-12-08T15:06:58Z | |
| dc.date.issued | 2010-05-01 | en_US |
| dc.description.abstract | We investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (< 60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device. | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2041744 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2041744 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5450 | |
| dc.identifier.wosnumber | WOS:000277047300001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Hysteresis | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | nanowire (NW) | en_US |
| dc.subject | poly-Si | en_US |
| dc.title | Operation of a Novel Device With Suspended Nanowire Channels | en_US |
| dc.type | Article | en_US |