Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions
| dc.citation.epage | 203 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 201 | en_US |
| dc.citation.volume | 11 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lee, S. C. | en_US |
| dc.contributor.author | Oates, A. S. | en_US |
| dc.contributor.author | Chang, K. M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:02Z | |
| dc.date.available | 2014-12-08T15:12:02Z | |
| dc.date.issued | 2011-03-01 | en_US |
| dc.description.abstract | We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull beta increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E(-n) characteristics. | en_US |
| dc.identifier.doi | 10.1109/TDMR.2010.2103316 | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2010.2103316 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9216 | |
| dc.identifier.wosnumber | WOS:000288454700029 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Cu/low-k interconnect reliability | en_US |
| dc.subject | line edge roughness (LER) | en_US |
| dc.subject | time-dependent dielectric breakdown (TDDB) | en_US |
| dc.title | Field Dependence of Porous Low-k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions | en_US |
| dc.type | Letter | en_US |