Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
| dc.citation.epage | 1487 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1485 | en_US |
| dc.citation.volume | 54 | en_US |
| dc.contributor.author | Wang, M. C. | en_US |
| dc.contributor.author | Tsao, S. W. | en_US |
| dc.contributor.author | Chang, T. C. | en_US |
| dc.contributor.author | Lin, Y. P. | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chen, J. R. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:47:56Z | |
| dc.date.available | 2014-12-08T15:47:56Z | |
| dc.date.issued | 2010-11-01 | en_US |
| dc.description.abstract | The photo leakage current (I(PLC)) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I(PLC) of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E(F)). Experimental results show the I(PLC) of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E(a)) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E(F). (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.sse.2010.04.006 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2010.04.006 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32000 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Photo leakage current | en_US |
| dc.subject | a-Si:H TFTs | en_US |
| dc.subject | Mechanical strain | en_US |
| dc.title | Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors | en_US |
| dc.type | Article | en_US |