Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation
| dc.citation.epage | + | en_US |
| dc.citation.spage | 37 | en_US |
| dc.citation.woscount | 8 | en_US |
| dc.contributor.author | Chen, Yu-Sheng | en_US |
| dc.contributor.author | Wu, Tai-Yuan | en_US |
| dc.contributor.author | Tzeng, Pei-Jer | en_US |
| dc.contributor.author | Chen, Pang-Shiu | en_US |
| dc.contributor.author | Lee, Heng-Yuan | en_US |
| dc.contributor.author | Lin, Cha-Hsin | en_US |
| dc.contributor.author | Chen, Frederick | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:32Z | |
| dc.date.available | 2017-04-21T06:49:32Z | |
| dc.date.issued | 2009 | en_US |
| dc.identifier.doi | 10.1109/VTSA.2009.5159281 | en_US |
| dc.identifier.isbn | 978-1-4244-2784-0 | en_US |
| dc.identifier.journal | PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VTSA.2009.5159281 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135007 | |
| dc.identifier.wosnumber | WOS:000272451000016 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation | en_US |
| dc.type | Proceedings Paper | en_US |
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