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Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation

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Date

2009

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DOI

10.1109/VTSA.2009.5159281

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http://dx.doi.org/10.1109/VTSA.2009.5159281
 https://ir.lib.nycu.edu.tw/handle/11536/135007

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會議論文;;Conferences Paper

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