Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation

doi:10.1109/VTSA.2009.5159281

標題:	Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation
作者:	Chen, Yu-Sheng Wu, Tai-Yuan Tzeng, Pei-Jer Chen, Pang-Shiu Lee, Heng-Yuan Lin, Cha-Hsin Chen, Frederick Tsai, Ming-Jinn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2009
URI:	http://dx.doi.org/10.1109/VTSA.2009.5159281 http://hdl.handle.net/11536/135007
ISBN:	978-1-4244-2784-0
DOI:	10.1109/VTSA.2009.5159281
期刊:	PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS
起始頁:	37
結束頁:	+
Appears in Collections:	Conferences Paper