Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Yu-Sheng	en_US
dc.contributor.author	Wu, Tai-Yuan	en_US
dc.contributor.author	Tzeng, Pei-Jer	en_US
dc.contributor.author	Chen, Pang-Shiu	en_US
dc.contributor.author	Lee, Heng-Yuan	en_US
dc.contributor.author	Lin, Cha-Hsin	en_US
dc.contributor.author	Chen, Frederick	en_US
dc.contributor.author	Tsai, Ming-Jinn	en_US
dc.date.accessioned	2017-04-21T06:49:32Z	-
dc.date.available	2017-04-21T06:49:32Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-2784-0	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/VTSA.2009.5159281	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135007	-
dc.language.iso	en_US	en_US
dc.title	Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed Operation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VTSA.2009.5159281	en_US
dc.identifier.journal	PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS	en_US
dc.citation.spage	37	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000272451000016	en_US
dc.citation.woscount	8	en_US
顯示於類別：	會議論文