Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition
| dc.citation.epage | 782 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 777 | en_US |
| dc.citation.volume | 310 | en_US |
| dc.citation.woscount | 20 | |
| dc.contributor.author | Tian, Jr-Sheng | en_US |
| dc.contributor.author | Liang, Mel-Hui | en_US |
| dc.contributor.author | Ho, Yen-Teng | en_US |
| dc.contributor.author | Liu, Yuan-An | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:35Z | |
| dc.date.available | 2014-12-08T15:12:35Z | |
| dc.date.issued | 2008-02-15 | en_US |
| dc.description.abstract | ZnO(1 1 (2) over bar 0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (10 0) substrate by atmospheric pressure metalorganic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 degrees C were composed of almost all (1 1 (2) over bar 0) oriented grains while (0 0 0 2) oriented ZnO grains started to appear at temperature above 550 degrees C. The a-plane ZnO films consisted of two types of domains with their c-axis perpendicular to each other due to LaAlO3(1 0 0) symmetry with low lattice mismatch along < 1 1 0 >. (C) 2007 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jcrysgro.2007.11.073 | en_US |
| dc.identifier.issn | 0022-0248 | en_US |
| dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2007.11.073 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9672 | |
| dc.identifier.wosnumber | WOS:000253650000007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high resolution x-ray diffraction | en_US |
| dc.subject | metalorganic chemical vapor deposition | en_US |
| dc.subject | oxides | en_US |
| dc.subject | semiconducting II-VI materials | en_US |
| dc.title | Growth of a-plane ZnO thin films on LaAlO3(100) substrate by metal-organic chemical vapor deposition | en_US |
| dc.type | Article | en_US |