High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric
| dc.citation.epage | 1319 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1317 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 32 | |
| dc.contributor.author | Su, N. C. | en_US |
| dc.contributor.author | Wang, S. J. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:08Z | |
| dc.date.available | 2014-12-08T15:08:08Z | |
| dc.date.issued | 2009-12-01 | en_US |
| dc.description.abstract | In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V(T) of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm(2)/V . s, and large I(on)/I(off) ratio of 5 x 10(7). These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2033392 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2033392 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6353 | |
| dc.identifier.wosnumber | WOS:000272044500023 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Amorphous indium-gallium-zinc oxide (a-IGZO) | en_US |
| dc.subject | equivalent oxide thickness | en_US |
| dc.subject | HfLaO | en_US |
| dc.subject | high-k | en_US |
| dc.subject | thin-film transistors | en_US |
| dc.title | High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric | en_US |
| dc.type | Article | en_US |