Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
| dc.citation.epage | 183 | en_US |
| dc.citation.spage | 173 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 5 | en_US |
| dc.contributor.author | Tsai, MS | en_US |
| dc.contributor.author | Sun, SC | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T05:59:33Z | |
| dc.date.available | 2019-04-02T05:59:33Z | |
| dc.date.issued | 1998-01-01 | en_US |
| dc.description.abstract | The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient. | en_US |
| dc.identifier.doi | 10.1080/10584589808202061 | en_US |
| dc.identifier.issn | 1058-4587 | en_US |
| dc.identifier.journal | INTEGRATED FERROELECTRICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1080/10584589808202061 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150470 | |
| dc.identifier.wosnumber | WOS:000076544100017 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | BST | en_US |
| dc.subject | annealing | en_US |
| dc.subject | oxygen vacancy | en_US |
| dc.subject | leakage current | en_US |
| dc.title | Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films | en_US |
| dc.type | Article | en_US |
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