High-density RF MIM capacitors using high-k La2O3 dielectrics
| dc.citation.epage | F165 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | F162 | en_US |
| dc.citation.volume | 151 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Yang, MY | en_US |
| dc.contributor.author | Yu, DS | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:52Z | |
| dc.date.available | 2014-12-08T15:39:52Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | The integrity of the metal-insulator-metal (MM) capacitor with high-k La2O3 dielectrics formed using a 400degreesC back-end process was investigated. A very high capacitance per unit area of 9.2 fF/mum(2) was achieved for La2O3 MIM capacitors at 1 MHz, significantly reducing the chip size of radio frequency (rf) circuits. A mathematical derivation, involving measured S parameters, yielded the small voltage-dependent capacitance (DeltaC/C) less than or equal to 100 ppm at 1 GHz, indicating that the precision capacitor circuit can be applied in the rf regime. Furthermore, such a high capacitance density can be maintained as the frequency is increased from 10 KHz to 20 GHz with a large Q factor greater than or equal to90. (C) 2004 The Electrochemical Society. | en_US |
| dc.identifier.doi | 10.1149/1.1752935 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1752935 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27241 | |
| dc.identifier.wosnumber | WOS:000222676300058 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-density RF MIM capacitors using high-k La2O3 dielectrics | en_US |
| dc.type | Article | en_US |