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Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots

dc.citation.epage823en_US
dc.citation.issue5en_US
dc.citation.spage821en_US
dc.citation.volume124en_US
dc.citation.woscount0
dc.contributor.authorSyperek, M.en_US
dc.contributor.authorMisiewicz, J.en_US
dc.contributor.authorChan, C. H.en_US
dc.contributor.authorDumcenco, D. O.en_US
dc.contributor.authorHuang, Y. S.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:34:13Z
dc.date.available2014-12-08T15:34:13Z
dc.date.issued2013-11-01en_US
dc.description.abstractCarrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Delta E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Delta E approximate to 28 divided by 42 meV.en_US
dc.identifier.doi10.12693/APhysPolA.124.821en_US
dc.identifier.issn0587-4246en_US
dc.identifier.journalACTA PHYSICA POLONICA Aen_US
dc.identifier.urihttp://dx.doi.org/10.12693/APhysPolA.124.821en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/23462
dc.identifier.wosnumberWOS:000328913500019
dc.language.isoen_USen_US
dc.titleCarrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dotsen_US
dc.typeArticleen_US

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