Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment
| dc.citation.epage | 540 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 538 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Wu, Hung-Chi | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:22Z | |
| dc.date.available | 2014-12-08T15:30:22Z | |
| dc.date.issued | 2013-04-01 | en_US |
| dc.description.abstract | In this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm(2)/V . s and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2244840 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2244840 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21717 | |
| dc.identifier.wosnumber | WOS:000316813100021 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Organic thin-film transistors (OTFTs) | en_US |
| dc.subject | plasma treatment | en_US |
| dc.subject | poly(3-hexylthiophene) (P3HT) | en_US |
| dc.title | Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment | en_US |
| dc.type | Article | en_US |