Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology
| dc.citation.epage | 131 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 128 | en_US |
| dc.citation.volume | 5 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Lee, Shih-Wei | en_US |
| dc.contributor.author | Chang, Ching-Yun | en_US |
| dc.contributor.author | Chang, Geng-Ming | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-03T06:44:30Z | |
| dc.date.available | 2019-04-03T06:44:30Z | |
| dc.date.issued | 2017-03-01 | en_US |
| dc.description.abstract | A submicron-thick Cu/In bonding by using single sided heating approach has been successfully demonstrated on chip-to-wafer-level without antioxidant metal coating. The single sided heating approach can successfully prevent oxidation of Cu metal on the wafer during bonding. As compared with double sided heating method, a lower specific contact resistance can be obtained in single sided heating method. In addition, post-bonding annealing can further improve the bonding quality. Excellent electrical performances of reliability tests show a great potential for future highly dense interconnect. | en_US |
| dc.identifier.doi | 10.1109/JEDS.2016.2645382 | en_US |
| dc.identifier.issn | 2168-6734 | en_US |
| dc.identifier.journal | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JEDS.2016.2645382 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/145452 | |
| dc.identifier.wosnumber | WOS:000400467500006 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Three-dimensional integration | en_US |
| dc.subject | chip to wafer bonding | en_US |
| dc.subject | single sided heating approach | en_US |
| dc.title | Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology | en_US |
| dc.type | Article | en_US |