Nanometer-scale conversion of Si3N4 to SiOx
| dc.citation.epage | 362 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 360 | en_US |
| dc.citation.volume | 76 | en_US |
| dc.citation.woscount | 70 | |
| dc.contributor.author | Chien, FSS | en_US |
| dc.contributor.author | Chang, JW | en_US |
| dc.contributor.author | Lin, SW | en_US |
| dc.contributor.author | Chou, YC | en_US |
| dc.contributor.author | Chen, TT | en_US |
| dc.contributor.author | Gwo, S | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Hsieh, WF | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:46Z | |
| dc.date.available | 2014-12-08T15:45:46Z | |
| dc.date.issued | 2000-01-17 | en_US |
| dc.description.abstract | It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (< 5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10(3) nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures. (C) 2000 American Institute of Physics. [S0003-6951(00)03003-5]. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30799 | |
| dc.identifier.wosnumber | WOS:000084675100037 | |
| dc.language.iso | en_US | en_US |
| dc.title | Nanometer-scale conversion of Si3N4 to SiOx | en_US |
| dc.type | Article | en_US |