A CONSISTENT MODEL FOR CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTOR-DEVICES
| dc.citation.epage | 772 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 766 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | CHANG, KM | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:57Z | |
| dc.date.available | 2014-12-08T15:05:57Z | |
| dc.date.issued | 1988-08-01 | en_US |
| dc.identifier.doi | 10.1088/0268-1242/3/8/006 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/3/8/006 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4500 | |
| dc.identifier.wosnumber | WOS:A1988P541300006 | |
| dc.language.iso | en_US | en_US |
| dc.title | A CONSISTENT MODEL FOR CARRIER TRANSPORT IN HEAVILY DOPED SEMICONDUCTOR-DEVICES | en_US |
| dc.type | Article | en_US |