Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation
| dc.citation.epage | 3026 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 3021 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.contributor.author | Chuang, JC | en_US |
| dc.contributor.author | Chen, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:47:26Z | |
| dc.date.available | 2014-12-08T15:47:26Z | |
| dc.date.issued | 1998-11-01 | en_US |
| dc.description.abstract | Passivation layers of 200 Angstrom sputtered Cr-O as well as reactive sputtered Cr-N-O were studied with respect to the passivation capability against thermal oxidation of Cu in flowing nitrogen and flowing oxygen ambients. In a flowing N-2 ambient, both Cr-O and Cr-N-O passivation layers were able to prohibit oxidation of Cu at temperatures up to 700 degrees C. In an O-2 ambient, the passivation capability of Cr-N-O layer was found to be 500 degrees C, which is 150 degrees C higher than that of Cr-O layer. The superiority of the passivation capability of the Cr-N-O layer is presumably due to decoration of the surface defects and grain boundaries with nitrogen, which provide fast paths for oxygen and copper diffusion. (C) 1998 American Vacuum Society. [S0734-211X(98)11706-7]. | en_US |
| dc.identifier.issn | 1071-1023 | en_US |
| dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31806 | |
| dc.language.iso | en_US | en_US |
| dc.title | Properties of sputtered Cr-O and reactively sputtered Cr-N-O as passivation layers against copper oxidation | en_US |
| dc.type | Article | en_US |