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Demonstration of using injection-locked Fabry-Perot laser diode for 10 Gbit/s 16-QAM OFDM WDM-PON

dc.citation.epage940en_US
dc.citation.issue15en_US
dc.citation.volume48en_US
dc.citation.woscount3
dc.contributor.authorYeh, C. H.en_US
dc.contributor.authorChow, C. W.en_US
dc.contributor.authorChen, H. Y.en_US
dc.contributor.authorSung, J. Y.en_US
dc.contributor.authorLiu, Y. L.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:23:53Z
dc.date.available2014-12-08T15:23:53Z
dc.date.issued1970-01-01en_US
dc.description.abstract"A 10 Gbit/s OFDM upstream transmission has been investigated by using a Fabry-Perot laser diode (FP-LD) based ONU with seeding-light in a colourless WDM-PON. Also demonstrated is the relationship of CW injection power and SNR of each OFDM subcarrier for a modelocked FP-LD. Moreover, when a 16-QAM OFDM modulation is applied in a modelocked FP-LD, -15.7 dBm received sensitivity at the BER of 3.8 x 10(-3) can be obtained after 20 km fibre transmission."en_US
dc.identifier.issn0013-5194en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/16620
dc.identifier.wosnumberWOS:000306711700033
dc.language.isoen_USen_US
dc.titleDemonstration of using injection-locked Fabry-Perot laser diode for 10 Gbit/s 16-QAM OFDM WDM-PONen_US
dc.typeArticleen_US

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